Features: · TrenchFET® Power MOSFET· New Low Thermal Resistance PowerPAKTM Package with Low 1.07-mm Profile· PWM Optimized for High EfficiencyApplication· Point-of-Load Synchronous Rectifier - 5-V or 3.3-V BUS Step Down - Qg Optimized for 500-kHz Operation· Synchronous Buck, Shoot-Thru Resista...
Si7882DP: Features: · TrenchFET® Power MOSFET· New Low Thermal Resistance PowerPAKTM Package with Low 1.07-mm Profile· PWM Optimized for High EfficiencyApplication· Point-of-Load Synchronous Rectifier - 5...
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| Parameter | Symbol | 10 secs | Steady State | Unit | |
| Drain-Source Voltage | VDS | 12 | V | ||
| Gate-Source Voltage | VGS | ±8 | |||
| Continuous Drain Current (TJ = 150)a | TA = 25 | ID | 22 | 13 | A |
| TA = 70 | 18 | 11 | |||
| Pulsed Drain Current | IDM | 50 | |||
| Continuous Source Current (Diode Conduction)a | IS | 4.1 | 1.6 | ||
| Maximum Power Dissipationa | TA = 25 | PD | 5 | 1.9 | W |
| TA = 70 | 3.2 | 1.2 | |||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 to 150 | /W | ||