Features: · TrenchFET® Power MOSFET·New Low Thermal Resistance PowerPAK® Package with Low 1.07-mm Profile· PWM Optimized for Fast Switching·100% Rg TestedApplication· Sychronous RectifierSpecifications Parameter Symbol 10 secs Steady State Unit Drain-Source Voltage VDS 40 V ...
Si7884DP: Features: · TrenchFET® Power MOSFET·New Low Thermal Resistance PowerPAK® Package with Low 1.07-mm Profile· PWM Optimized for Fast Switching·100% Rg TestedApplication· Sychronous RectifierSpe...
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| Parameter | Symbol | 10 secs | Steady State | Unit | |
| Drain-Source Voltage | VDS | 40 | V | ||
| Gate-Source Voltage | VGS | ±20 | |||
| Continuous Drain Current (TJ = 150)a | TA = 25 | ID | 20 | 12 | A |
| TA = 70 | 16 | 10 | |||
| Pulsed Drain Current | IDM | 50 | |||
| Single Avalanche Current | L = 0.1 mH | IAS | 30 | ||
| Continuous Source Current (Diode Conduction)a | IS | 4.7 | 1.7 | ||
| Maximum Power Dissipationa | TA = 25 | PD | 5.2 | 1.9 | W |
| TA = 70 | 3.3 | 1.2 | |||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 to 150 | /W | ||