Features: · TrenchFET® Power MOSFET· New Low Thermal Resistance PowerPAK® Package with Low 1.07-mm Profile· Low Gate Charge· 100% Rg TestedApplication· Synchronous RectifierSpecifications Parameter Symbol 10 secs Steady State Unit Drain-Source Voltage VDS 30 V Gate-Source...
Si7892DP: Features: · TrenchFET® Power MOSFET· New Low Thermal Resistance PowerPAK® Package with Low 1.07-mm Profile· Low Gate Charge· 100% Rg TestedApplication· Synchronous RectifierSpecifications ...
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| Parameter | Symbol | 10 secs | Steady State | Unit | |
| Drain-Source Voltage | VDS | 30 | V | ||
| Gate-Source Voltage | VGS | ±20 | |||
| Continuous Drain Current (TJ = 150)a | TA = 25 | ID | 25 | 15 | A |
| TA = 70 | 20 | 12 | |||
| Pulsed Drain Current | IDM | 60 | |||
| Continuous Source Current (Diode Conduction)a | IS | 4.5 | 1.6 | ||
| Maximum Power Dissipationa | TA = 25 | PD | 5.4 | 1.9 | W |
| TA = 70 | 3.4 | 1.2 | |||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 to 150 | /W | ||