Si7900EDN

Specifications Parameter Symbol 10 secs Steady State Unit Drain-Source Voltage VDS 20 20 V Gate-Source Voltage VGS ±12 ±12 Continuous Drain Current TA = 25 ID 8.5 9 A TA = 85 6.4 6.4 Pulsed Drain Current IDM 30 30 Continuous Source Current (MOSFET Diode ...

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SeekIC No. : 004490795 Detail

Si7900EDN: Specifications Parameter Symbol 10 secs Steady State Unit Drain-Source Voltage VDS 20 20 V Gate-Source Voltage VGS ±12 ±12 Continuous Drain Current TA = 25 ID 8.5 9 A ...

floor Price/Ceiling Price

Part Number:
Si7900EDN
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/12

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Product Details

Description



Specifications

Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage VDS 20 20 V
Gate-Source Voltage VGS ±12 ±12
Continuous Drain Current TA = 25 ID 8.5 9 A
TA = 85 6.4 6.4
Pulsed Drain Current IDM 30 30
Continuous Source Current (MOSFET Diode Conduction) IS 2.9 2.9
Maximum Power Dissipationa TA = 25 PD 2.9 3.2 W
TA = 85 3.1 1.7
Operating Junction and Storage Temperature Range TJ,& Tstg -55 to 150 -55 to 150 /W
Maximum Junction-to-Ambient RthJA 23 23

 




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