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Si7901EDN

Features: · TrenchFET® Power MOSFETS: 1.8-V Rated· ESD Protected: 4500 V· Ultra-Low Thermal Resistance, PowerPAK® Package with Low 1.07-mm ProfileApplication· Bidirectional SwitchSpecifications Parameter Symbol 10 secs Steady State Unit Drain-Source Voltage VDS -20 V Gate...

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SeekIC No. : 004490797 Detail

Si7901EDN: Features: · TrenchFET® Power MOSFETS: 1.8-V Rated· ESD Protected: 4500 V· Ultra-Low Thermal Resistance, PowerPAK® Package with Low 1.07-mm ProfileApplication· Bidirectional SwitchSpecificati...

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Part Number:
Si7901EDN
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· TrenchFET® Power MOSFETS: 1.8-V Rated
· ESD Protected: 4500 V
· Ultra-Low Thermal Resistance, PowerPAK®
   Package with Low 1.07-mm Profile


Application

· Bidirectional Switch


Specifications

Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage VDS -20 V
Gate-Source Voltage VGS ±12
Continuous Drain Current (TJ = 150)a TA = 25 ID -6.3 -4.3 A
TA = 85 -4.5 -3.1
Pulsed Drain Current IDM -20
Continuous Source Current (Diode Conduction)a IS -2.3 -1.1
Maximum Power Dissipationa TA = 25 PD 2.8 1.3 W
TA = 85 1.5 0.7
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150



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