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Si7909DN

Features: • TrenchFET® Power MOSFETS: 1.8-V Rated• New Low Thermal Resistance PowerPAK® Package• Advanced High Cell Density Process• Ultra-Low rDS(on), and High PD CapabilityApplication• Load Switch• PA Switch• Battery Switch• Bi-Directional ...

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Si7909DN: Features: • TrenchFET® Power MOSFETS: 1.8-V Rated• New Low Thermal Resistance PowerPAK® Package• Advanced High Cell Density Process• Ultra-Low rDS(on), and High PD Ca...

Si7909DN Data Sheet

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Part Number:
Si7909DN
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• TrenchFET® Power MOSFETS: 1.8-V Rated
• New Low Thermal Resistance PowerPAK®
   Package
• Advanced High Cell Density Process
• Ultra-Low rDS(on), and High PD Capability


Application

• Load Switch
• PA Switch
• Battery Switch
• Bi-Directional Switch


Specifications

Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage VDS -12 V
Gate-Source Voltage VGS ±8
Continuous Drain Current (TJ = 150)a TA = 25 ID -7.7 -5.3 A
TA = 85 -5.5 -3.8
Pulsed Drain Current IDM -20
Continuous Source Current (Diode Conduction)a IS -2.3 -1.1
Maximum Power Dissipationa TA = 25 PD -2.8 1.3 W
TA = 85 1.5 0.85
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150
Soldering Recommendations (Peak Temperature)b,c   260



Description

 


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