Features: · TrenchFET® Power MOSFET· New Low Thermal Resistance PowerPAK® Package· Dual MOSFET for Space Savings· PWM Optimized for Fast Switching· Avalanche RatedApplication· Primary Side SwitchSpecifications Parameter Symbol 10 secs Steady State Unit Drain-Source Voltage VDS...
Si7946DP: Features: · TrenchFET® Power MOSFET· New Low Thermal Resistance PowerPAK® Package· Dual MOSFET for Space Savings· PWM Optimized for Fast Switching· Avalanche RatedApplication· Primary Side S...
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Specifications Parameter Symbol 10 secs Steady State Unit Drain-Source Voltage VDS 2...
| Parameter | Symbol | 10 secs | Steady State | Unit | |
| Drain-Source Voltage | VDS | 150 | V | ||
| Gate-Source Voltage | VGS | ±20 | |||
| Continuous Drain Current (TJ = 150)a | TA = 25 | ID | 3.3 | 2.1 | A |
| TA = 70 | 2.6 | 1.7 | |||
| Pulsed Drain Current | IDM | 10 | |||
| Continuous Source Current (Diode Conduction)a | IS | 2.9 | 1.2 | ||
| SingleAvalanche Current | L = 1.0 mH | IAS | 9 | ||
| Single Avalanche Energy | EAS | 4 | mJ | ||
| Maximum Power Dissipationa | TA = 25 | PD | 3.5 | 14 | W |
| TA = 70 | 2.2 | 0.9 | |||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 to 150 | |||