Si8402DB Selling Leads, Price trend, Si8402DB DataSheet download, circuit diagram from SeekIC.com

Features: · TrenchFET® Power MOSFET· New MICRO FOOT® Chipscale PackagingReduces Footprint Area Profile (0.62 mm) andOn-Resistance Per Footprint AreaApplication· PA, Battery and Load Switch for Portable DevicesSpecifications Parameter Symbol 5secs Steady State Unit Drain-Source ...

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SeekIC No. : 004490849 Detail

Si8402DB: Features: · TrenchFET® Power MOSFET· New MICRO FOOT® Chipscale PackagingReduces Footprint Area Profile (0.62 mm) andOn-Resistance Per Footprint AreaApplication· PA, Battery and Load Switch f...

Si8402DB Data Sheet

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Part Number:: Si8402DB
Supply Ability:: 5000

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Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

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Upload time: 2024/4/27

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Recent History
What is this?

SI84 evaluate
Features: ·Low profile (4.0mm max. Height) SMD type.·Unshielded.·Self-leads, suitable for high den...
SI8401DB-T1-E3 evaluate
US $.65 - .69 / Piece

MOSFET 20V 4.9A 2.77W 65mohm @ 4.5V
SI8401DB-T1-E1 evaluate
US $.25 - .33 / Piece

MOSFET 20V 4.9A 2.77W 65mohm @ 4.5V

Product Details

Description

Features:

· TrenchFET^®Power MOSFET
· New MICRO FOOT^® Chipscale Packaging
Reduces Footprint Area Profile (0.62 mm) and
On-Resistance Per Footprint Area

Application

· PA, Battery and Load Switch for Portable Devices

Specifications

Parameter		Symbol	5secs	Steady State	Unit
Drain-Source Voltage		V_DS	-20		V
Gate-Source Voltage		V_GS	±8
Continuous Drain Current (T_J = 150)^a	T_A= 25	I_D	7.3	5.3	A
	T_A = 70		5.9	4.3
Pulsed Drain Current		I_DM	30
Continuous Source Current (Diode Conduction)^a		I_S	2.3	1.2
Maximum Power Dissipation^a	T_A = 25	P_D	2.77	1.47	W
	T_A= 70		1.77	0.94
Operating Junction and Storage Temperature Range		T_J, T_stg	-55 to 150
Package Reflow Conditions^b	VPR		215
	IR/Convection		220

Description

20-V N-Channel 1.8-V (G-S) MOSFET
Si8402DB

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Si8402DB

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