Si8409DB

Features: · TrenchFET® Power MOSFET· New MICRO FOOT® Chipscale Packaging Reduces Footprint Area, Profile (0.62 mm) and On-Resistance Per Footprint Area· Pin Compatible to Si8401DBApplicationLoad Switch, Battery Switch, and PA Switch for Portable DevicesSpecifications Parameter IR...

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Si8409DB Picture
SeekIC No. : 004490852 Detail

Si8409DB: Features: · TrenchFET® Power MOSFET· New MICRO FOOT® Chipscale Packaging Reduces Footprint Area, Profile (0.62 mm) and On-Resistance Per Footprint Area· Pin Compatible to Si8401DBApplication...

floor Price/Ceiling Price

Part Number:
Si8409DB
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/25

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Product Details

Description



Features:

· TrenchFET® Power MOSFET
· New MICRO FOOT® Chipscale Packaging Reduces Footprint Area, Profile (0.62 mm) and On-Resistance Per Footprint Area
· Pin Compatible to Si8401DB






Application

Load Switch, Battery Switch, and PA Switch for Portable Devices




Specifications

Parameter
IR/Convection
5 secs
Steady State
Unit
Drain-Source Voltage
VDS
−30
V
Gate-Source Voltage
VGS
±12
Continuous Drain Current (TJ = 150)a
TA = 25
ID
−6.3
−4.6
A
TA = 70
−5.1
−3.7
Pulsed Drain Current
IDM
−25
continuous Source Current (Diode Conduction)a
IS
−2.5
−1.3
Maximum Power Dissipationa
TA = 25
PD
2.77
1.47
W
TA = 70
1.77
0.94
Operating Junction and Storage Temperature Range
TJ, Tstg
−55 to 150
Package Reflow Conditionsb
VPR
215
IR/Convection
220





Description

P-Channel 30-V (D-S) MOSFET
Si8409DB



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