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Si8415DB

Features: · TrenchFET® Power MOSFET· New MICRO FOOT® Chipscale PackagingReduces Footprint Area Profile (0.62 mm) andOn-Resistance Per Footprint Area· Ultra-Low On-ResistanceApplication· Load Switch, Charger Switch, and PA Switch forPortable DevicesSpecifications Parameter Symbol 5se...

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SeekIC No. : 004490856 Detail

Si8415DB: Features: · TrenchFET® Power MOSFET· New MICRO FOOT® Chipscale PackagingReduces Footprint Area Profile (0.62 mm) andOn-Resistance Per Footprint Area· Ultra-Low On-ResistanceApplication· Load...

Si8415DB Data Sheet

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Part Number:
Si8415DB
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· TrenchFET® Power MOSFET
· New MICRO FOOT® Chipscale Packaging
Reduces Footprint Area Profile (0.62 mm) and
On-Resistance Per Footprint Area
· Ultra-Low On-Resistance




Application

· Load Switch, Charger Switch, and PA Switch for
Portable Devices




Specifications

Parameter Symbol 5secs Steady State Unit
Drain-Source Voltage VDS -12 V
Gate-Source Voltage VGS ±8
Continuous Drain Current (TJ = 150)a TA = 25 ID -7.3 -5.3 A
TA = 70 -5.9 -4.3
Pulsed Drain Current IDM -25
Continuous Source Current (Diode Conduction)a IS -2.5 -1.3
Maximum Power Dissipationa TA = 25 PD 2.77 1.47 W
TA = 70 1.77 0.94
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150
Package Reflow Conditionsb VPR 215
IR/Convection 220





Description

P-Channel 12-V (D-S) MOSFET
Si8415DB



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