Si8800EDB

DescriptionThe Si8800EDB is designed as one kind of N-channel 20V (D-S) MOSFETs with typical applications for portable devices such as cell phones, smart phones and MP3 players with load switch and small signal switch.Si8800EDB has six features. (1)Halogen-free according to IEC 61249-2-21 definiti...

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SeekIC No. : 004490871 Detail

Si8800EDB: DescriptionThe Si8800EDB is designed as one kind of N-channel 20V (D-S) MOSFETs with typical applications for portable devices such as cell phones, smart phones and MP3 players with load switch and ...

floor Price/Ceiling Price

Part Number:
Si8800EDB
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/25

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Product Details

Description



Description

The Si8800EDB is designed as one kind of N-channel 20V (D-S) MOSFETs with typical applications for portable devices such as cell phones, smart phones and MP3 players with load switch and small signal switch.

Si8800EDB has six features. (1)Halogen-free according to IEC 61249-2-21 definition. (2)TrenchFET power MOSFET. (3)Ultra small 0.8mm x 0.8mm outline. (4)Ultra thin 0.357mm height. (5)Typical ESD protection 1500V. (6)Compliant to RoHS directive 2002/95/EC. Those are all the main features.

Some absolute maximum ratings of Si8800EDB have been concluded into several points as follow. (1)Its drain-source voltage would be 20V. (2)Its gate-source voltage would be +/-8V. (3)Its continuous drain current would be 2.8A. (4)Its pulse drain current would be 15A. (5)Its continuous source-drain diode current would be 0.7A. (6)Its maximum power dissipation would be 0.9W. (7)Its operating junction temperature range would be from -55°C to 150°C. (8)Its storage temperature range would be from -55°C to 150°C. (9)Its soldering recommendations (peak temperature) would be 260°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some static electrical characteristics of Si8800EDB are concluded as follow. (1)Its drain-source breakdown voltage would be min 20V. (2)Its Vds temperature coefficient would be typ 18mV/°C. (3)Its Vgs(th) temperature coefficient would be typ -2.3mV/°C. (4)Its gate source threshold voltage would be min 0.4V and max 1.0V. (5)Its gate to source leakage would be max +/-0.5uA at Vgs=+/-4.5V and would be max +/-6uA at Vgs=+/-8V. (6)Its zero gate voltage drain current would be max 1uA and would be max 10uA at Tj=55°C. (7)Its on-state drain current would be min 10A. (8)Its forward transconductance would be 10S. At present we have not got so much information about this IC and we would try hard to get more information about it. If you have any question or suggestion or want to know more information please contact us for details. Thank you!




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