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SI9801DY

MOSFET 20V 4.5/4A 2W

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SeekIC No. : 00165655 Detail

SI9801DY: MOSFET 20V 4.5/4A 2W

SI9801DY Data Sheet

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Part Number:
SI9801DY
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N and P-Channel Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 14 V Continuous Drain Current : 4.5 A
Resistance Drain-Source RDS (on) : 55 mOhms Configuration : Dual
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOIC-8 Narrow    

Description

Packaging :
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Configuration : Dual
Transistor Polarity : N and P-Channel
Package / Case : SOIC-8 Narrow
Continuous Drain Current : 4.5 A
Resistance Drain-Source RDS (on) : 55 mOhms
Gate-Source Breakdown Voltage : +/- 14 V


Pinout

Connection Diagram


Specifications

Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage VDS 20 -20 V
Gate-Source Voltage VGS ±14
Continuous Drain Current (TJ = 150°C)a TA = 25°C ID ±4.5 ±4.0 A
TA = 70°C ±3.6 ±3.0
Pulsed Drain Current IDM ±20
Continuous Source Current (Diode Conduction)a IS 1.7 1.7
Maximum Power Dissipationa TA = 25°C PD 2.0 W
TA = 70°C 1.3
Operating Junction and Storage Temperature Range TJ, Tstg 55 to 150 °C



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