MFG:Vishay Package Cooled:SO-8 D/C:08+
MFG: Vishay
Package Cooled: SO-8
D/C: 08+
Description: The Si9912 is a dual MOSFET high-speed driver with break-before-make. It is designed to operate in hig...
The Si9912 is a dual MOSFET high-speed driver with break-before-make. It is designed to operate in high frequency dc-dc switchmode power supplies. The high-side driver is bootstrapped to handle the high voltage slew rate associated with "floating" high-side gate drivers. Each driver is capable of switching a 3000-pF load with 60-ns propogation delay and 25-ns transition time. The Si9912 comes with an internal break-before-make feature to prevent shoot-through current in the external MOSFETs. A shutdown pin is used to enable thedriver. When disabled, the quiescent current of the driver is less than 5 A.
The Si9912 is available in both standard and lead (Pb)-free, 8-pin SOIC packages for operation over the industrial operation range (−40 to 85).
| Parameter | Symbol | Limit | Unit |
| Low Side Driver Supply Voltage | VDD | 7.0 | V |
| Input Voltage on IN | VIN | −0.3 to VDD +0.3 | |
| Shutdown Pin Voltage | VSD | −0.3 to VDD +0.3 | |
| Bootstrap Voltage | VBOOT | 35.0 | |
| High Side Driver (Bootstrap) Supply Voltage | VBOOT − VS | 7.0 | |
| Operating Junction Temperature Range | TJ | −40 to 125 | |
| Storage Temperature Range | Tstg | −40 to 150 | |
| Power Dissipation (Note a and b) | PD | 830 | mW |
| Thermal Impedance | JA | 125 | /W |
| Lead Temperature (soldering 10 Sec) | 300 |
SI9912
PDF/DataSheet Download
Si9910 datasheet
Si9910 datasheet
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