Purchase Si9925DY, In-stock Si9925DY From SeekIC.
Package Cooled:4000 D/C:98+


Part Number: Si9925DY
Package Cooled: 4000
D/C: 98+
Description: Dual N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology.
Package Cooled:4000 D/C:98+


Package Cooled: 4000
D/C: 98+
Description: Dual N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology.
| Symbol | Parameter | Conditions | Min | Max | Unit |
| VDS | drain-source voltage (DC) | Tj = 25 to 150 °C | - | 20 | V |
| VGS | gate-source voltage (DC) | - | ±12 | V | |
| ID | drain current (DC) | Tamb = 25 °C; pulsed; tp 10 s; Figure 2 and 3 | - | 5 | A |
| Tamb = 70 °C; pulsed; tp 10 s; Figure 2 | 4 | ||||
| IDM | peak drain current | Tamb = 25 °C; pulsed; tp 10 ms; Figure 3 | - | 48 | A |
| Ptot | total power dissipation | Tamb = 25 °C; pulsed; tp 10 s; Figure 1 | - | 2 | W |
| Tamb = 70 °C; pulsed; tp 10 s; Figure 1 | 1.3 | ||||
| Tstg | storage temperature | -55 | +150 | °C | |
| Tj | operating junction temperature | -55 | +15 | °C | |
| Source-drain diode | |||||
| IS | source (diode forward) current (DC) Tamb = 25 °C | - | 1.3 | A | |
SI9925DY
PDF/DataSheet Download








