SI9925DY

Packaging :
Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Configuration : Dual
Package / Case : SOIC-8 Narrow
Gate-Source Breakdown Voltage : +/- 12 V
Continuous Drain Current : 5 A
Resistance Drain-Source RDS (on) : 50 mOhms


Features:

· Low on-state resistance
· Fast switching
· TrenchMOS™ technology


Application

· DC to DC convertors
· DC motor control
· Lithium-ion battery applications
· Notebook PC
· Portable equipment applications


Pinout




Specifications

Symbol	Parameter	Conditions	Min	Max	Unit
VDS	drain-source voltage (DC)	Tj = 25 to 150 °C	-	20	V
VGS	gate-source voltage (DC)		-	±12	V
ID	drain current (DC)	Tamb = 25 °C; pulsed; tp 10 s; Figure 2 and 3	-	5	A
		Tamb = 70 °C; pulsed; tp 10 s; Figure 2		4
IDM	peak drain current	Tamb = 25 °C; pulsed; tp 10 ms; Figure 3	-	48	A
Ptot	total power dissipation	Tamb = 25 °C; pulsed; tp 10 s; Figure 1	-	2	W
		Tamb = 70 °C; pulsed; tp 10 s; Figure 1		1.3
Tstg	storage temperature		-55	+150	°C
Tj	operating junction temperature		-55	+15	°C
Source-drain diode
IS	source (diode forward) current (DC) Tamb = 25 °C		-	1.3	A

Description

Dual N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology.Product availability: Si9925DY in SOT96-1 (SO8).