MOSFET NCH DUAL MOSFET
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| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 20 V |
| Gate-Source Breakdown Voltage : | +/- 12 V | Continuous Drain Current : | 4.8 A |
| Resistance Drain-Source RDS (on) : | 30 mOhms | Configuration : | Dual |
| Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT |
| Package / Case : | SO-8 |

| Parameter | Symbol | 10 secs | Steady State | Unit | |
| Drain-Source Voltage | VDS | 20 | V | ||
| Gate-Source Voltage | VGS | 8 | |||
| Continuous Drain Current(TJ= 150C) |
TA= 25 |
ID | 6 | 4.8 | A |
| TA= 70 |
5 | 3.8 | |||
| Pulsed Drain Current (10 witdh) |
IDM | 30 | |||
| Continuous Source Current (Diode Conduction)a | IS | 1.7 | 1.0 | ||
| Maximum Power Dissipationa |
TA= 25 |
PD | 2.0 | 1.25 | W |
| TA= 70 |
1.3 | 1.8 | |||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 to 150 | |||