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MFG:SILICONIX

MFG:SILICONIX

| Parameter | Symbol | 10 secs | Steady State | Unit | |
| Drain-Source Voltage | VDS | 20 | V | ||
| Gate-Source Voltage | VGS | 8 | |||
| Continuous Drain Current(TJ= 150C) |
TA= 25 |
ID | 6 | 4.8 | A |
| TA= 70 |
5 | 3.8 | |||
| Pulsed Drain Current (10 witdh) |
IDM | 30 | |||
| Continuous Source Current (Diode Conduction)a | IS | 1.7 | 1.0 | ||
| Maximum Power Dissipationa |
TA= 25 |
PD | 2.0 | 1.25 | W |
| TA= 70 |
1.3 | 1.8 | |||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 to 150 | |||
SI9926ADY
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