SI9926DY

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Configuration : Dual Dual Drain
Package / Case : SOIC-8 Narrow
Gate-Source Breakdown Voltage : +/- 10 V
Continuous Drain Current : 10.5 A
Resistance Drain-Source RDS (on) : 12 m Ohms


Features:

• 6.5 A, 20 V. R_DS(ON) = 0.030 @ V_GS = 4.5 V
                      R_DS(ON) = 0.043 @ V_GS = 2.5 V.
• Optimized for use in battery protection circuits
• ±10 VGSS allows for wide operating voltage range
• Low gate charge


Application

• Battery protection
• Load switch
• Power management


Pinout




Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	20	V
VGSS	Gate-Source Voltage	±10	V
ID	Drain Current Continuous (Note 1a)                       Pulsed	6.5	A
		20
PD	Power Dissipation for Dual Operation	2	W
	Power Dissipation for Single Operation (Note 1a)                                                           (Note 1b)                                                           (Note 1c)	1.6
		1
		0.9
TJ, TSTG	Operating and Storage Junction Temperature Range	-55 to +150	°C

Description

These Si9926DY N-Channel 2.5V specified MOSFETs use Fairchild Semiconductor's advanced PowerTrench process. Si9926DY has been optimized for power management applications with a wide range of gate drive voltage (2.5V 10V).