MOSFET DUAL PCH POWER TRENCH MO
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| Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | - 20 V |
| Continuous Drain Current : | 3.4 A | Configuration : | Dual |
| Mounting Style : | SMD/SMT | Package / Case : | SOIC-8 Narrow |
| Packaging : | Reel |

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|
Symbol | 10 secs | Steady State | Unit | |
| Drain-Source Voltage | VDS | −20 | V | ||
| Gate-Source Voltage | VGS | ±12 | |||
| Continuous Drain Current (TJ = 150)a | TA = 25 | ID | −4.7 | −3.6 | A |
| TA = 70 | −3.8 | −2.8 | |||
| Pulsed Drain Current | IDM | −20 | |||
| continuous Source Current (Diode Conduction)a | IS | −1.7 | −0.9 | ||
| Maximum Power Dissipationa | TA = 25 | PD | 2.0 | 1.1 | W |
| TA = 70 | 1.3 | 0.7 | |||
| Operating Junction and Storage Temperature Range | TJ, Tstg | −55 to 150 | |||