SI9936DY

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Configuration : Dual Dual Drain
Package / Case : SOIC-8 Narrow
Continuous Drain Current : 5 A
Resistance Drain-Source RDS (on) : 0.044 Ohms


Features:

·  Low on-state resistance
·  Fast switching
·  TrenchMOS™ technology


Application

·  DC to DC convertors
·  DC motor control
·  Lithium-ion battery applications
·  Notebook PC
·  Portable equipment applications.


Pinout




Specifications

Symbol	Parameter	Conditions	Min	Max	Unit
VDS	drain-source voltage (DC)	Tj = 25 to 150 °C	-	30	V
VGS	gate-source voltage (DC)		-	±20	V
ID	drain current (DC)	Tamb = 25 °C; pulsed; tp 10 s; Figure 2 and 3	-	5	A
		Tamb = 70 °C; pulsed; tp 10 s; Figure 2		4
IDM	peak drain current	Tamb = 25 °C; pulsed; tp 10 ms; Figure 3	-	40	A
Ptot	total power dissipation	Tamb = 25 °C; pulsed; tp 10 s; Figure 1	-	2	W
		Tamb = 70 °C; pulsed; tp 10 s; Figure 1		1.3
Tstg	storage temperature		-55	+150	°C
Tj	operating junction temperature		-55	+15	°C
Source-drain diode
IS	source (diode forward) current (DC) Tamb = 25 °C		-	1.3	A

Description

Dual N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology.Product availability: Si9936DY in SOT96-1 (SO8).


Parameters:

Technical/Catalog Information	SI9936DY
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	2 N-Channel (Dual)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	5A
Rds On (Max) @ Id, Vgs	50 mOhm @ 5A, 10V
Input Capacitance (Ciss) @ Vds	525pF @ 15V
Power - Max	900mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	35nC @ 10V
Package / Case	8-SOIC
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	SI9936DY SI9936DY