SI9939DY

Packaging :
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Configuration : Dual
Transistor Polarity : N and P-Channel
Package / Case : SOIC-8 Narrow
Continuous Drain Current : 3.5 A
Resistance Drain-Source RDS (on) : 50 mOhms, 110 mOhms


Pinout




Specifications

Parameter		Symbol	N-Channel	P-Channel	Unit
Drain-Source Voltage		VDS	30	-30	V
Gate-Source Voltage		VGS	±20	±20
Continuous Drain Current (TJ = 150)a	TA = 25	ID	±3.5	±3.5	A
	TA = 70		±2.8	±2.8
Pulsed Drain Current		IDM	±20	±20
Continuous Source Current (Diode Conduction)a		IS	1.7	-1.7
Maximum Power Dissipationa	TA = 25	PD	2.0		W
	TA = 70		1.3
Operating Junction and Storage Temperature Range		TJ,Tstg	55 to 150