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Si9945DY*

Features: · 3.3 A, 60 V. RDS(ON) = 0.100 W @ VGS = 10 V RDS(ON) = 0.200 W @ VGS = 4.5 V· Low gate charge.· Fast switching speed.· High power and current handling capabilityApplication· Battery switch· Load switch· Motor controlsPinoutSpecifications Symbol Parameter Si4920DY Units VDSS ...

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SeekIC No. : 004490990 Detail

Si9945DY*: Features: · 3.3 A, 60 V. RDS(ON) = 0.100 W @ VGS = 10 V RDS(ON) = 0.200 W @ VGS = 4.5 V· Low gate charge.· Fast switching speed.· High power and current handling capabilityApplication· Battery switc...

Si9945DY* Data Sheet

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Part Number:
Si9945DY*
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· 3.3 A, 60 V. RDS(ON) = 0.100 W @ VGS = 10 V
  RDS(ON) = 0.200 W @ VGS = 4.5 V
· Low gate charge.
· Fast switching speed.
· High power and current handling capability


Application

· Battery switch
· Load switch
· Motor controls


Pinout

Connection Diagram


Specifications

Symbol Parameter Si4920DY Units
VDSS Drain-Source Voltage 60 V
VGSS Gate-Source Voltage ±20 V
ID Drain Current - Continuous (Note 1a)
- Pulsed		 3.3 A
10
PD Power Dissipation for Dual Operation 2.0 W
Power Dissipation for Single Operation (Note 1a
(Note 1b)
(Note 1c)		 1.6
1
TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C
THERMAL CHARACTERISTICS
RJA Thermal Resistance, Junction-to-Ambient (Note 1a) 62.5 °C/W
RJC Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W



Description

These Si9945DY* N-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

These Si9945DY* devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.




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