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SI9953DY

MOSFET 20V 2.3A 2W

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SeekIC No. : 00166571 Detail

SI9953DY: MOSFET 20V 2.3A 2W

SI9953DY Data Sheet

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Part Number:
SI9953DY
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 2.3 A
Resistance Drain-Source RDS (on) : 0.25 Ohms Configuration : Dual
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOIC-8 Narrow    

Description

Packaging :
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Configuration : Dual
Package / Case : SOIC-8 Narrow
Resistance Drain-Source RDS (on) : 0.25 Ohms
Continuous Drain Current : 2.3 A


Pinout

Connection Diagram


Specifications

Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
-20
V
Gate-Source Voltage
VGS
±20
Continuous Drain Current (TJ = 150)a TA = 25
ID
±2.3
A
TA = 70
±1.8
Pulsed Drain Current
IDM
±10
Continuous Source Current (Diode Conduction)a
IS
-1.7
Maximum Power Dissipationa TA = 25
PD
2.0
W
TA = 70
1.3
Operating Junction and Storage Temperature Range  
TJ, Tstg
-55 to 150



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