SI9955DY

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Configuration : Dual Dual Drain
Package / Case : SOIC-8 Narrow
Drain-Source Breakdown Voltage : 50 V
Resistance Drain-Source RDS (on) : 0.13 Ohms
Continuous Drain Current : 3 A


Features:

· 3.0 A, 50 V. R_DS(ON) = 0.130 W @ V_GS = 10 V
                       R_DS(ON) = 0.200 W @ V_GS = 4.5 V
· Low gate charge.
· Fast switching speed.
· High power and current handling capability.


Application

· Battery switch
· Load switch
· Motor controls


Pinout




Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain- Source Voltage	50	V
VGSS	Gate- Source Voltage	±20	V
ID	Drain Current - Continuous (Note1a) - Pulsed	3.0	A
Pd	Power Dissipation for Single Operation	10
	Power Dissipation for Single Operation (Note1a) (Note1b) (Note1c)	2.0	W
		1.6
		1
		0.9
TJ,TSTG	Operating and Storage Junction Temperature Range	-55 to +150

Description

These Si9955DY N-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

These Si9955DY devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.