SiE874DF

The SiE874DF is designed as one kind of N-Channel 20-V (D-S) MOSFETs with typical applications of POL and OR-ing and DC/DC.

SiE874DF has seven features. (1)Halogen-free according to IEC 61249-2-21 definition. (2)TrenchFET gen III power MOSFET. (3)Ultra low thermal resistance using top-exposed polarPAK package for double-sided cooling. (4)Leadframe-Based new encapsulated package with die not exposed and same layout regardless of die size, 100V. (5)Low Qgd/Qgs ratio helps prevent shoot-through. (6)100% Rg and UIS tested. (7)Compliant to RoHS directive 2002/95/EC.Those are all the main features.

Some absolute maximum ratings of SiE874DF have been concluded into several points as follow. (1)Its drain to source voltage would be 20V. (2)Its gate to source voltage would be +/-20V. (3)Its continuous drain current (Tj=150°C) would be 258A (silicon limit) and 60A (package limit) at Tc=25°C and would be 60A at Tc=70°C and would be 52A at Ta=25°C and would be 42A at Ta=70°C. (4)Its pulsed drain current would be 100A. (5)Its continuous source to drain diode current would be 60A at Tc=25°C and would be 4.3A at Ta=25°C. (5)Its single pulse avalanche current would be 40A. (6)Its avalanche energy would be 80mJ. (7)Its maximum power dissipation would be 125W at Tc=25°C and woule be 80W at Tc=70°C and would be 5.2W at Ta=25°C and would be 3.3W at Ta=70°C. (8)Its operating junction and storage temperature range would be from -55°C to 150°C. (9)Its soldering recommendations (peak temperature) would be 260°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some static electrical characteristics of SiE874DF are concluded as follow. (1) Its drain to source breakdown voltage would be min 20V. (2)Its Vds temperature coefficient would be typ 20mV/°C. At present we have not got so much information about this IC and we would try hard to get more information about it. If you have any question or suggestion or want to know more information of SiE874DF please contact us for details. Thank you!