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SiHF730AS

Features: • Low Gate Charge Qg Results in Simple Drive Requirement• Improved Gate, Avalanche and Dynamic dV/dt Ruggedness• Fully Characterized Capacitance and Avalanche Voltage and Current• Effective Coss Specified• Lead (Pb)-free AvailableApplication• Switch Mo...

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SeekIC No. : 004491152 Detail

SiHF730AS: Features: • Low Gate Charge Qg Results in Simple Drive Requirement• Improved Gate, Avalanche and Dynamic dV/dt Ruggedness• Fully Characterized Capacitance and Avalanche Voltage and...

SiHF730AS Data Sheet

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Part Number:
SiHF730AS
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Low Gate Charge Qg Results in Simple Drive Requirement
• Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
• Fully Characterized Capacitance and Avalanche Voltage and Current
• Effective Coss Specified
• Lead (Pb)-free Available


Application

• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• High Sspeed Power Switching


Specifications

PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS 400 V
Gate-Source Voltage VGS ± 30
Continuous Drain Current VGS at 10 V TC = 25 °C ID 5.5 A
TC = 100 °C 3.5
Pulsed Drain Currenta, e IDM 22
Linear Derating Factor   0.6 W/°C
Single Pulse Avalanche Energyb, e EAS 290 mJ
Repetitive Avalanche Currenta IAR 5.5 A
Repetitive Avalanche Energya EAR 7.4 mJ
Maximum Power Dissipation TC = 25 °C PD 74 W
Peak Diode Recovery dV/dtc, e dV/dt 4.6 V/ns
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150 °C
Soldering Recommendations (Peak Temperature) for 10 s   300d
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting TJ = 25 °C, L = 19 mH, RG = 25 , IAS = 5.5 A (see fig. 12).
c. ISD 5.5 A, dI/dt 90 A/s, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
e. Uses IRF730A/SiHF730A data and test condition


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