SiHF740AS

Features:

• Low Gate Charge Qg Results in Simple Drive Requirement
• Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
• Fully Characterized Capacitance and Avalanche Voltage and Current
• Effective Coss specified (AN 1001)
• Lead (Pb)-free Available


Application

• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• High speed Power Switching


Specifications

Characteristics			Symbol	Rating	Unit
Drain - source voltage			VDS	400	V
Gate - source voltage			VGS	±30
Continuous Drain current	VGS at 10 V	TC = 25	ID	10	A
		TC = 100		6.3
Pulsed Drain Currenta, e			IDM	40
Linear Derating Factor				1.0	W/
Single pulse avalanche Energy e			EAS	630	mJ
Avalanche current			IAR	10	A
Repetitive avalanche Energya			EAR	12.5	mJ
Maximum Power Dissipation	TA = 25		PD	3.1	W
	TC = 25			125
Peak Diode Recovery dV/dtc, e			dV/dt	5.9	V/ns
Operating Junction and Storage Temperature Range			TJ, Tstg	- 55 to + 150
Soldering Recommendations (Peak Temperature)		for 10 s		300d

Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T_J = 25, L = 12.6 mH, R_G = 25 , I_AS = 10 A (see fig. 12).
c. I_SD 10 A, dI/dt 330 A/µs, V_DD V_DS, T_J 150.
d. 1.6 mm from case.
e. Uses IRF740A/SiHF740A data and test conditions.

* Pb containing terminations are not RoHS compliant, exemptions may apply