Features: • Advanced Process Technology• Surface Mount (IRF9Z14S/SiHF9Z14S)• Low-ProfileThrough-Hole (IRF9Z14L/SiHF9Z14L)• 175 Operating Temperature• Fast Switching• P-Channel• Fully Avalanche Rated• Lead (Pb)-free AvailableSpecifications PARAMET...
SiHF9Z14S: Features: • Advanced Process Technology• Surface Mount (IRF9Z14S/SiHF9Z14S)• Low-ProfileThrough-Hole (IRF9Z14L/SiHF9Z14L)• 175 Operating Temperature• Fast Switching...
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|
PARAMETER |
SYMBOL |
LIMIT |
UNTI | |
| Drain-Source Voltagee |
VDS |
-60 |
V | |
| Gate-Source Voltagee |
VGS |
±20 | ||
| Continuous Drain Current e,VGS at - 10 V | TC = 25 |
ID
|
-6.7 |
A |
| TC = 100 |
-4.7 | |||
| Pulsed Drain Currenta,e |
IDM
|
-27 | ||
| Linear Derating Factor |
0.29 |
W/ | ||
| Single Pulse Avalanche Energyb, e |
EAS |
140 |
mJ | |
| Repetitive Avalanche Currenta |
IAR |
-6.7 |
A | |
| Repetitive Avalanche Energya |
EAR |
4.3 |
mJ | |
|
Maximum Power Dissipation |
TC = 25 |
PD
|
3.7 |
W |
| TA = 25 |
43 | |||
Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit of IRF9Z14L/SiHF9Z14L, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2PAK is a surface mount power package capable of accommodating die size up to HEX-4. IRF9Z14L/SiHF9Z14L provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of is low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application.
The through-hole version (IRF9Z14L/SiHF9Z14L) is available for low-profile applications.