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SiHF9Z34S

Features: • Advanced Process Technology• Surface Mount (IRF9Z34S/SiHF9Z34S)• Low-Profile Through-Hole (IRSiHF9Z34L/SiHF9Z34L)• 175 Operating Temperature• Fast Switching• P-Channel• Fully Avalanche Rated• Lead (Pb)-free AvailableSpecifications PAR...

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SeekIC No. : 004491160 Detail

SiHF9Z34S: Features: • Advanced Process Technology• Surface Mount (IRF9Z34S/SiHF9Z34S)• Low-Profile Through-Hole (IRSiHF9Z34L/SiHF9Z34L)• 175 Operating Temperature• Fast Switchin...

SiHF9Z34S Data Sheet

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Part Number:
SiHF9Z34S
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/25

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Product Details

Description



Features:

• Advanced Process Technology
• Surface Mount (IRF9Z34S/SiHF9Z34S)
• Low-Profile Through-Hole (IRSiHF9Z34L/SiHF9Z34L)
• 175 Operating Temperature
• Fast Switching
• P-Channel
• Fully Avalanche Rated
• Lead (Pb)-free Available




Specifications

PARAMETER
SYMBOL
LIMIT
UNTI
Drain-Source Voltagee
VDS
-60
V
Gate-Source Voltagee
VGS
±20
Continuous Drain Current e,VGS at - 10 V TC = 25
ID
-18
A
TC = 100
-13
Pulsed Drain Currenta,e
IDM
-72
Linear Derating Factor  
0.59
W/
Single Pulse Avalanche Energyb, e
EAS
370
mJ
Repetitive Avalanche Currenta
IAR
-18
A
Repetitive Avalanche Energya
EAR
8.8
mJ
* Pb containing terminations are not RoHS compliant, exemptions may apply




Description

Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit of IRSiHF9Z34L/SiHF9Z34L, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The D2PAK is a surface mount power package capable of accommodating die sizes up to HEX-4. IRSiHF9Z34L/SiHF9Z34L provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application.

The through-hole version (IRSiHF9Z34L/SiHF9Z34L) is available for low-profile applications.






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