SiHFB11N50A

Features: • Low Gate Charge Qg Results in Simple Drive Requirement• Improved Gate, Avalanche and Dynamic dV/dt Ruggedness• Fully Characterized Capacitance and Avalanche Voltage and current• Lead (Pb)-free AvailableApplication• Switch Mode Power Supply (SMPS)• Un...

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SeekIC No. : 004491161 Detail

SiHFB11N50A: Features: • Low Gate Charge Qg Results in Simple Drive Requirement• Improved Gate, Avalanche and Dynamic dV/dt Ruggedness• Fully Characterized Capacitance and Avalanche Voltage and...

floor Price/Ceiling Price

Part Number:
SiHFB11N50A
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2025/12/25

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Product Details

Description



Features:

• Low Gate Charge Qg Results in Simple Drive Requirement
• Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
• Fully Characterized Capacitance and Avalanche Voltage and current
• Lead (Pb)-free Available



Application

• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• High Speed Power Switching



Specifications

PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
VDS
500
V
Gate-Source Voltage
VGS
± 30
V
Continuous Drain Current VGS at 10 V TC = 25
TC = 100
ID
11
A
7.0
Pulsed Drain Current
IDM
44
A
Linear Derating Factor
1.3
W/
Single Pulse Avalanche Energy
EAS
275
mJ
Avalanche Current
IAR
11
A
Repetiitive Avalanche Energy
EAR
17
mJ
Maximum Power Dissipation
PD
170
W
Peak Diode Recovery dV/dt
dv/dt
6.9
V/ns
Operating Junction and Storage Temperature Range
TJ,Tstg
- 55 to + 150
Soldering Recommendations (Peak Temperature) for 10 s
300



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