Features: • Low Gate Charge Qg Results in Simple Drive Requirement• Improved Gate, Avalanche and Dynamic dV/dt Ruggedness• Fully Characterized Capacitance and Avalanche Voltage and current• Lead (Pb)-free AvailableApplication• Switch Mode Power Supply (SMPS)• Un...
SiHFB11N50A: Features: • Low Gate Charge Qg Results in Simple Drive Requirement• Improved Gate, Avalanche and Dynamic dV/dt Ruggedness• Fully Characterized Capacitance and Avalanche Voltage and...
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|
PARAMETER |
SYMBOL |
LIMIT |
UNIT |
| Drain-Source Voltage |
VDS |
500 |
V |
| Gate-Source Voltage |
VGS |
± 30 |
V |
| Continuous Drain Current VGS at 10 V TC = 25 TC = 100 |
ID |
11 |
A |
|
7.0 | |||
| Pulsed Drain Current |
IDM |
44 |
A |
| Linear Derating Factor |
1.3 |
W/ | |
| Single Pulse Avalanche Energy |
EAS |
275 |
mJ |
| Avalanche Current |
IAR |
11 |
A |
| Repetiitive Avalanche Energy |
EAR |
17 |
mJ |
| Maximum Power Dissipation |
PD |
170 |
W |
| Peak Diode Recovery dV/dt |
dv/dt |
6.9 |
V/ns |
| Operating Junction and Storage Temperature Range |
TJ,Tstg |
- 55 to + 150 |
|
| Soldering Recommendations (Peak Temperature) for 10 s |
300 |