Features: • Surface Mount (IRFBC30S, SiHFBC30S)• Low-Profile Through-Hole (IRFBC30L, SiHFBC30L)• Available in Tape and Reel (IRFBC30S,SiHFBC30S)• Dynamic dV/dt Rating• 150 Operating Temperature• Fast Switching• Fully Avalanche Rated• Lead (Pb)-free ...
SiHFBC30S: Features: • Surface Mount (IRFBC30S, SiHFBC30S)• Low-Profile Through-Hole (IRFBC30L, SiHFBC30L)• Available in Tape and Reel (IRFBC30S,SiHFBC30S)• Dynamic dV/dt Rating• ...
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|
Parameter |
Symbol |
Limit |
Unit | ||
| Drain-Source Voltage |
VDS |
600 |
V | ||
| Gate-Source Voltage |
VGS |
±20 |
V | ||
| Drain Current-Continuous e | VGS at 10 V | TC=25 |
ID |
3.6 2.3 |
A |
| TC=100 | |||||
| Pulsed Drain Currenta e |
IDM |
14 |
A | ||
| Linear Derating Factor |
0.59 |
W/ | |||
| Single Pulse Avalanche Energyb e |
EAS |
290 |
mJ | ||
| Repetitive Avalanche Currenta |
IAR |
3.6 |
A | ||
| Repetitive Avalanche Energye |
EAR |
7.4 |
mJ | ||
| Maximum Power Dissipation | TC=25 |
PD |
3.1 74 |
W | |
| Ta=25 | |||||
| Peak Diode Recovery dV/dtc |
dV/dt |
3.0 |
V/ns | ||
| Operating Junction and S torage Temperature R ange |
TJ, TSTG |
-55 to 150 |
|||
| Soldering Recommendations (Peak Temperature) | for 10 s |
300d | |||
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface mount power package capable of the accommodating die sizes up to HEX-4. IRFBC30L, SiHFBC30L provides the highest power capability and the lowest possible on-resistance in any existing surface mount package.
The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. The through-hole version (IRFBC30L, SiHFBC30L) is a available for low-profile applications.