SiHFBC40S

The SiHFBC40S is designed as the third generation power MOSFET from vishay which provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

SiHFBC40S has seven features. (1)Surface mount. (2)Available in tape and reel. (3)Dynamic dV/dt rating. (4)150°C operating temperature. (5)Fast switching. (6)Fully avalanche rated. (7)Lead (Pb)-free available. That are all the main features.

Some absolute maximum ratings of SiHFBC40S have been concluded into several points as follow. (1)Its drain to source voltage would be 600V. (2)Its gate to source voltage would be +/-20V. (3)Its continuous drain current would be 6.2A at 25°C and would be 3.9A at 100°C. (4)Its pulsed drain current would be 25A. (5)Its linear derating factor would be 1.0W/°C. (6)Its single pulse avalanche energy would be 570mJ. (7)Its repetitive avalanche current would be 6.2A. (8)Its repetitive avalanche energy would be 13mJ. (9)Its maximum power dissipation would be 130W at Tc=25°C and would be 3.1W at Ta=25°C. (10)Its peak diode recovery dv/dt would be 3.0V/ns. (11)Its operating junction and storage temperature range would be from -55°C to +150°C. (12)Its soldering recommendations (peak temperature) would be 300°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some characteristics of SiHFBC40S are concluded as follow. (1)Its drain to source breakdown voltage would be min 600V. (2)Its Vds temperature coefficient would be typ 0.70V/°C. (3)Its gate to source threshold voltage would be min 2.0V and max 4.0V. (4)Its gate to source leakage would be max 100nA. (5)Its zero gate voltage drain current would be max 100uA at Vds=600V and would be max 500uA at Vds=480V and Tj=125°C. (6)Its drain to source on-state resistance would be max 1.2 ohms. (7)Its forward transconductance would be min 4.7S. And so on. If you have any question or suggestion or want to know more information of SiHFBC40S please contact us for details. Thank you!