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SiHFL110

Features: • Surface Mount• Available in Tape and Reel• Dynamic dV/dt Rating• Repetitive Avalanche Rated• Fast Switching• Ease of Paralleling• Simple Drive Requirements• Lead (Pb)-free AvailableThe above info is from (www.seekic.com)Specifications P...

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SeekIC No. : 004491176 Detail

SiHFL110: Features: • Surface Mount• Available in Tape and Reel• Dynamic dV/dt Rating• Repetitive Avalanche Rated• Fast Switching• Ease of Paralleling• Simple Drive R...

SiHFL110 Data Sheet

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Part Number:
SiHFL110
Supply Ability:
5000

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  • 1~5000
  • Unit Price
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Surface Mount
• Available in Tape and Reel
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available

The above info is from (www.seekic.com)


Specifications

PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS 100 V
Gate-Source Voltage VGS ±20
Continuous Drain Current VGS at 10 V TC = 25 ID 1.5 A
TC = 100 0.96
Pulsed Drain Currenta IDM 12
Linear Derating Factor   0.025 W/
Linear Derating Factor (PCB Mount)e   0.017 W/
Single Pulse Avalanche Energyb EAS 150 mJ
Repetitive Avalanche Currenta IAR 1.5 A
Repetitive Avalanche Energya EAR 0.31 mJ
Maximum Power Dissipation (PCB Mount)e TA = 25 PD 2.0 W
Maximum Power Dissipation TC = 25 3.1 W
Peak Diode Recovery dV/dtc dV/dt 5.5 V/ns
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150
Soldering Recommendations (Peak Temperature) for 10 s   300d
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, starting TJ = 25 °C, L = 25 mH, RG = 25 , IAS = 3.0 A (see fig. 12).
c. ISD 5.6 A, dI/dt 75 A/s, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply

Edited by (www.seekic.com) ,the biggest IC PDF and datasheet download site.


Description

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness.The SOT-223 package of SiHFL110 is designed for surface-mounting using vapor phase, infrared, or wave soldering techniques.SiHFL110's unique package design allows for easy automatic pick-and-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of greater than 1.25 W is possible in a typical surface mount application. The above info is from (www.seekic.com)




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