Features: • Surface Mount• Available in Tape and Reel• Dynamic dV/dt Rating• Repetitive Avalanche Rated• Fast Switching• Ease of Paralleling• Simple Drive Requirements• Lead (Pb)-free AvailableSpecifications PARAMETER SYMBOL LIMIT UNIT Dra...
SiHFL214: Features: • Surface Mount• Available in Tape and Reel• Dynamic dV/dt Rating• Repetitive Avalanche Rated• Fast Switching• Ease of Paralleling• Simple Drive R...
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| PARAMETER | SYMBOL | LIMIT | UNIT | ||
| Drain-Source Voltage | VDS | 250 | V | ||
| Gate-Source Voltage | VGS | ± 20 | |||
| Continuous Drain Current | VGS at 10 V | TC = 25 °C | ID | 0.79 | A |
| TC = 100 °C | 0.50 | ||||
| Pulsed Drain Currenta | IDM | 6.3 | |||
| Linear Derating Factor | 0.025 | W/ | |||
| Linear Derating Factor (PCB Mount)e | 0.017 | W/ | |||
| Single Pulse Avalanche Energyb | EAS | 50 | mJ | ||
| Repetitive Avalanche Currenta | IAR | 0.79 | A | ||
| Repetitive Avalanche Energya | EAR | 0.31 | mJ | ||
| Maximum Power Dissipation (PCB Mount)e | TA = 25 °C | PD | 3.1 | W | |
| Maximum Power Dissipation | TC = 25 °C | 2.0 | W | ||
Third generation Power MOSFETs of SiHFL214 from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The SOT-223 package is designed for surface-mounting using vapor phase, infrared, or wave soldering techniques. SiHFL214's unique package design allows for easy automatic pick-and-place as with other SOT or SOIC packages but has the added advantage of improved thermal performace due to an enlarged tab for heatsinking. Power dissipation of greater than 1.25 W is possible in a typical surface mount application.