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SiHFP254

Features: • Dynamic dV/dt Rating• Repetitive Avalanche Rated• Isolated Central Mounting Hole• Fast Switching• Ease of Paralleling• Simple Drive Requirements• Lead (Pb)-free AvailableSpecifications PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage...

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SiHFP254: Features: • Dynamic dV/dt Rating• Repetitive Avalanche Rated• Isolated Central Mounting Hole• Fast Switching• Ease of Paralleling• Simple Drive Requirements•...

SiHFP254 Data Sheet

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Part Number:
SiHFP254
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/25

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Product Details

Description



Features:

• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Isolated Central Mounting Hole
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available


Specifications

PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS 250 V
Gate-Source Voltage VGS ± 20
Continuous Drain Current VGS at 10 V TC = 25 ID 23 A
TC = 100 15
Pulsed Drain Currenta IDM 92
Linear Derating Factor   1.5 W/
Single Pulse Avalanche Energyb EAS 410 mJ
Repetitive Avalanche Currenta IAR 23 A
Repetitive Avalanche Energya EAR 19 mJ
Maximum Power Dissipation TC = 25 PD 190 W
Peak Diode Recovery dV/dtc dV/dt 4.8 V/ns
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150
Soldering Recommendations (Peak Temperature) for 10 s   300d
Mounting Torque 6-32 or M3 screw   10 lbf ` in
1.1 N ` m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 , L = 1.2 mH, RG = 25 , IAS = 23 A (see fig. 12).
c. ISD 23 A, dI/dt 180 A/s, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply


Description

Third generation Power MOSFETs of SiHFP254 from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mouting hole. SiHFP254 also provides greater creepage distance between pins to meet the requirements of most safety specifications.




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