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SiHFR430A

Features: • Low Gate Charge Qg Results in Simple Drive Requirement• Improved Gate, Avalanche and Dynamic dV/dt Ruggedness• Fully Characterized Capacitance and Avalanche Voltage and Current• Effective Coss Specified• Lead (Pb)-free AvailableApplication• Switch Mo...

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SiHFR430A: Features: • Low Gate Charge Qg Results in Simple Drive Requirement• Improved Gate, Avalanche and Dynamic dV/dt Ruggedness• Fully Characterized Capacitance and Avalanche Voltage and...

SiHFR430A Data Sheet

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Part Number:
SiHFR430A
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Low Gate Charge Qg Results in Simple Drive Requirement
• Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
• Fully Characterized Capacitance and Avalanche Voltage and Current
• Effective Coss Specified
• Lead (Pb)-free Available




Application

• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• High Speed Power Switching


Specifications

Parameter
Symbol
LIMIT
Unit
Drain-Source Voltage
VDS
500
V
Gate-Source Voltage
VGS
±30
V
Continuous Drain Current TC=25
TC=100
ID
5.0
3.2
A
Pulsed Drain Current
IDM
20
A
Linear Derating Factor  
0.91
W/
Avalanche Current
IAR
5.0
A
Repetitive avalanche energy
EAR
11
mJ
Single pulsed avalanche energy
EAS
130
mJ
Peak diode recovery dv/dt
dv/dt
3.0
V/ns
Power Dissipation
PD
110
W
Junction and Storage Temperature Range
TJ,TSTG
-55 to 150
Soldering Recommendations (Peak Temperature)
for 10 s
300



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