DescriptionThe SiHFS11N50A is designed as power MOSFET. Typical applications include switch mode power supply (SMPS), uninterruptible power supply and high speed power switching. Its typical SMPS topologies include two transistor forward, half and full bridge, power factor correction boost.SiHFS11...
SiHFS11N50A: DescriptionThe SiHFS11N50A is designed as power MOSFET. Typical applications include switch mode power supply (SMPS), uninterruptible power supply and high speed power switching. Its typical SMPS to...
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The SiHFS11N50A is designed as power MOSFET. Typical applications include switch mode power supply (SMPS), uninterruptible power supply and high speed power switching. Its typical SMPS topologies include two transistor forward, half and full bridge, power factor correction boost.
SiHFS11N50A has five features. (1)Low gate charge Qg results in simple drive requirement. (2)Improved gate, avalanche and dynamic dv/dt ruggedness. (3)Fully characterized capacitance and avalanche voltage and current. (4)Effective coss specified. (5)Lead (Pb)-free available. That are all the main features.
Some absolute maximum ratings of SiHFS11N50A have been concluded into several points as follow. (1)Its gate to source voltage would be +/-30V. (2)Its continuous drain current would be 11A at 25°C and would be 7.0A at 100°C. (3)Its pulsed drain current would be 44A. (4)Its single pulse avalanche energy would be 275mJ. (5)Its repetitive avalanche current would be 11A. (6)Its repetitive avalanche energy would be 17mJ. (7)Its maximum power dissipation would be 170W. (8)Its peak diode recovery dv/dt would be 6.9V/ns. (9)Its operating junction and storage temperature range would be from -55°C to +150°C. (10)Its soldering recommendations (peak temperature) would be 300°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.
Also some characteristics of SiHFS11N50A are concluded as follow. (1)Its drain to source breakdown voltage would be min 500V. (2)Its Vds temperature coefficient would be typ 0.06V/°C. (3)Its gate to source threshold voltage would be min 2.0V and max 4.0V. (4)Its gate to source leakage would be max +/-100nA. (5)Its zero gate voltage drain current would be max 25uA at Vds=500V, Vgs=0 and would be max 250uA at Vds=400V and Vgs=0 and Tj=125°C. (6)Its drain to source on-state resistance would be max 0.52 ohms. (7)Its forward transconductance would be min 6.1S. And so on. If you have any question or suggestion or want to know more information of SiHFS11N50A please contact us for details. Thank you!