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SiHFZ34L

Features: • Advanced Process Technology• Surface Mount• Low-Profile Through-Hole (IRFZ34L/SiHFZ34L)• 175 Operating Temperature• Fast Switching• Lead (Pb)-free AvailableSpecifications PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS ...

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SiHFZ34L: Features: • Advanced Process Technology• Surface Mount• Low-Profile Through-Hole (IRFZ34L/SiHFZ34L)• 175 Operating Temperature• Fast Switching• Lead (Pb)-free Ava...

SiHFZ34L Data Sheet

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Part Number:
SiHFZ34L
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Advanced Process Technology
• Surface Mount
• Low-Profile Through-Hole (IRFZ34L/SiHFZ34L)
• 175 Operating Temperature
• Fast Switching
• Lead (Pb)-free Available


Specifications

PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
VDS
60
V
Gate-Source Voltage
VGS
± 20
Continuous Drain Current
VGS at 10 V
TC = 25
ID
30
A
TC = 100
21
Pulsed Drain Currenta, e
IDM
120
Linear Derating Factor
0.59
W/
Single Pulse Avalanche Energyb, e
EAS
200
mJ
Maximum Power Dissipation
TC = 25
PD
88
W
TA = 25
3.7
Peak Diode Recovery dV/dtc, e
dV/dt
4.5
V/ns
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to + 175
Soldering Recommendations (Peak Temperature)
for 10 s
300d
Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, Starting TJ = 25 , L = 260 H, RG = 25 , IAS = 30 A (see fig. 12).
c. ISD 30 A, dI/dt 200 A/s, VDD VDS, TJ 175 .
d. 1.6 mm from case.
e. Uses IRFZ34/SiHFZ34 data and test conditions.
* Pb containing terminations are not RoHS compliant, exemptions may apply


Description

Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit of IRFZ34L/SiHFZ34L, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The D2PAKis a surface mount power package capable of accommodating die sizes up to HEX-4. IRFZ34L/SiHFZ34L provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2 W in a typical surface mount application.

The through-hole version (IRFZ34L/SiHFZ34L) is available for low-profile applications.




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