Position: Home  > All Categories> Integrated Circuits (ICs) > SiHFZ48L

SiHFZ48L

Features: • Advanced Process Technology• Surface Mount (IRFZ48S/SiHFZ48S)• Low-Profile Through-Hole (IRFZ48L/SiHFZ48L)• 175 Operating Temperature• Fast Switching• Lead (Pb)-free AvailableSpecifications PARAMETER SYMBOL LIMIT UNIT Drain-Sour...

product image

SiHFZ48L Picture
See larger image
SeekIC No. : 004491191 Detail

SiHFZ48L: Features: • Advanced Process Technology• Surface Mount (IRFZ48S/SiHFZ48S)• Low-Profile Through-Hole (IRFZ48L/SiHFZ48L)• 175 Operating Temperature• Fast Switching•...

SiHFZ48L Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
SiHFZ48L
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2025/12/25

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

• Advanced Process Technology
• Surface Mount (IRFZ48S/SiHFZ48S)
• Low-Profile Through-Hole (IRFZ48L/SiHFZ48L)
• 175 Operating Temperature
• Fast Switching
• Lead (Pb)-free Available


Specifications

PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
VDS
60
V
Gate-Source Voltage
VGS
± 20
Continuous Drain Currentf
VGS at 10 V
TC = 25
ID
50
A
TC = 100
50
Pulsed Drain Currenta, e
IDM
290
Linear Derating Factor
1.3
W/
Single Pulse Avalanche Energyb, e
EAS
100
mJ
Maximum Power Dissipation
TC = 25
PD
190
W
TA = 25
3.7
Peak Diode Recovery dV/dtc, e
dV/dt
4.5
V/ns
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to + 175
Soldering Recommendations (Peak Temperature)d
for 10 s
300
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, Starting TJ = 25, L = 22 H, RG = 25 , IAS = 72 A (see fig. 12).
c. ISD 72 A, dI/dt 200 A/s, VDD VDS, TJ 175.
d. 1.6 mm from case.
e. Uses IRFZ48/SiHFZ48 data and test conditions.
f. Calculated continuous current based on maximum allowable junction temperature.
* Pb containing terminations are not RoHS compliant, exemptions may apply


Description

Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit of IRFZ48L/SiHFZ48L, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The D2PAK is a surface mount power package capable of accommodating die sizes up to HEX-4. IRFZ48L/SiHFZ48L provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2 W in a typical surface mount application.

The through-hole version (IRFZ48L/SiHFZ48L) is available for low-profile applications.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Tools
TCP202
G084SN05 V.3
Industrial Controls, Meters
SGDM-15ADA
41AA1600E
Cables, Wires
821-0814-a
415-0100-150
Cables, Wires - Management
NM-SF50+
CCK26.5-MM-190-30
Optical Inspection Equipment
AA924
A21K4B
Tapes, Adhesives
803
AC452-2
View more