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SiHFZ48S

Features: • Advanced Process Technology• Surface Mount (IRFZ48S/SiHFZ48S)• Low-Profile Through-Hole (IRFZ48L/SiHFZ48L)• 175 Operating Temperature• Fast Switching• Lead (Pb)-free AvailableSpecifications PARAMETER SYMBOL LIMIT UNIT Drain-Sour...

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SiHFZ48S: Features: • Advanced Process Technology• Surface Mount (IRFZ48S/SiHFZ48S)• Low-Profile Through-Hole (IRFZ48L/SiHFZ48L)• 175 Operating Temperature• Fast Switching•...

SiHFZ48S Data Sheet

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Part Number:
SiHFZ48S
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Advanced Process Technology
• Surface Mount (IRFZ48S/SiHFZ48S)
• Low-Profile Through-Hole (IRFZ48L/SiHFZ48L)
• 175 Operating Temperature
• Fast Switching
• Lead (Pb)-free Available


Specifications

PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
VDS
60
V
Gate-Source Voltage
VGS
± 20
Continuous Drain Currentf
VGS at 10 V
TC = 25
ID
50
A
TC = 100
50
Pulsed Drain Currenta, e
IDM
290
Linear Derating Factor
1.3
W/
Single Pulse Avalanche Energyb, e
EAS
100
mJ
Maximum Power Dissipation
TC = 25
PD
190
W
TA = 25
3.7
Peak Diode Recovery dV/dtc, e
dV/dt
4.5
V/ns
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to + 175
Soldering Recommendations (Peak Temperature)d
for 10 s
300
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, Starting TJ = 25, L = 22 H, RG = 25 , IAS = 72 A (see fig. 12).
c. ISD 72 A, dI/dt 200 A/s, VDD VDS, TJ 175.
d. 1.6 mm from case.
e. Uses IRFZ48/SiHFZ48 data and test conditions.
f. Calculated continuous current based on maximum allowable junction temperature.
* Pb containing terminations are not RoHS compliant, exemptions may apply


Description

Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit of IRFZ48L/SiHFZ48L, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The D2PAK is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of IRFZ48L/SiHFZ48L's low internal connection resistance and can dissipate up to 2 W in a typical surface mount application.

The through-hole version (IRFZ48L/SiHFZ48L) is available for low-profile applications.




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