SiR404DP

The SiR404DP is designed as one kind of N-Channel 20-V (D-S) MOSFET device that can be used in wide range of applications such as (1)Fixed Telecom; (2)OR-ing; (3)POL. Also this device has some points of features:(1)Halogen-free According to IEC 61249-2-21 Definition; (2)TrenchFET Gen III Power MOSFET; (3)100 % Rg Tested; (4)100 % UIS Tested; (5)2.5 V and 3.3 V Gate Drive MOSFET for dc-to-dc Applications; (6)Compliant to RoHS Directive 2002/95/EC.

The absolute maximum ratings of the SiR404DP can be summarized as:(1)Drain-Source Voltage: 20 V;(2)Gate-Source Voltage: +/-12 V;(3)Continuous Drain Current (TJ = 150 °C): 36.3 or 60 A;(4)Pulsed Drain Current: 100 A;(5)Continuous Source-Drain Diode Current: 5.6 or 60 A;(6)Maximum Power Dissipation: 4.0 to 104 W;(7)Operating Junction and Storage Temperature Range: -55 to 150;(8)Soldering Recommendations (Peak Temperature): 260.

The electrical characteristics of this device SiR404DP can be summarized as:(1)Drain-Source Breakdown Voltage: 20 V;(2)VDS Temperature Coefficient: 17 mV/;(3)VGS(th) Temperature Coefficient: -4.4 mV/;(4)Gate-Source Threshold Voltage: 0.6 to 1.5 V;(5)Gate-Source Leakage: +/-100 nA;(6)Zero Gate Voltage Drain Current: 1 or 10 uA;(7)On-State Drain Current: 30 A. If you want to know more information about the SIR404DP, please download the datasheet in www.seekic.com or www.chinaicmart.com .