SiR892DP

The SiR892DP is designed as one kind of N-Channel 25-V (D-S) MOSFET device that can be used in wide range of applications such as Low-Side MOSFET in Synchronous Buck dc-to-dc Converters - Game Machine. And this device has some points of features such as (1)Halogen-free According to IEC 61249-2-21; (2)TrenchFET Power MOSFET; (3)100 % Rg Tested; (4)100 % UIS Tested.

The absolute maximum ratings of the SiR892DP can be summarized as:(1)Drain-Source Voltage: 25 V;(2)Gate-Source Voltage: +/-20 V;(3)Continuous Drain Current (TJ = 150 °C): 50 to 24 A;(4)Pulsed Drain Current: 70 A;(5)Continuous Source-Drain Diode Current: 50 to 4.5 A;(6)Single Pulse Avalanche Current: 40 A;(7) Single Pulse Avalanche Energy: 80 mJ;(8)Maximum Power Dissipation: 50 to 3.2 W;(9)Operating Junction and Storage Temperature Range: -55 to 150 ;(10)Soldering Recommendations (Peak Temperature): 260 . If you want to know more information such as the electrical characteristics about the SiR892DP, please download the datasheet in www.seekic.com or www.chinaicmart.com.