SiS438DN

The SiS438DN is designed as one kind of dual N-Channel 20-V (D-S) MOSFET device that can be used in wide range of applications such as (1)DC/DC conversion; (2)POL. And this device has some points of features:(1)Halogen-free According to IEC 61249-2-21 Definition; (2)TrenchFET-Gen III Power MOSFET; (3)100 % Rg Tested; (4)100 % UIS Tested; (5)Compliant to RoHS Directive 2002/95/EC.

The SiS438DN absolute maximum ratings of the SIS438DN can be summarized as:(1)Drain-Source Voltage: 20 V;(2)Gate-Source Voltage: +/- 20 V;(3)Pulsed Drain Current: 32 A;(4)Maximum Power Dissipation: 2.2 to 27.7 W;(5)Continuous Drain Current (TJ = 150 °C): 11.3 to 16 A;(6)Operating Junction and Storage Temperature Range: -55 to 150 ;(7)Soldering Recommendations (Peak Temperature): 260 .

The electrical characteristics of the SiS438DN can be summarized as:(1)Drain-Source Breakdown Voltage: 20 V;(2)VDS Temperature Coefficient: 22 mV/°C;(3)VGS(th) Temperature Coefficient: -5.0 mV/°C;(4)Gate-Source Threshold Voltage: 1.0 to 2.3 V;(5)Gate-Source Leakage: ±100 nA;(6)On-State Drain Current: 20 A;(7)Forward Transconductance: 26 S. If you want to know more information about the SIS438DN, please download the datasheet in www.seekic.com or www.chinaicmart.com .