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T160S4BVP

Features: • Access time Flash Memory 90ns (Max.) SRAM 85ns (Max.)• Supply voltage Vcc=2.7 ~ 3.6V• Ambient temperature W version Ta=-20 ~ 85• Package : 48-pin TSOP (Type-I) , 0.4mm lead pitchApplicationMobile communication productsPinoutDescriptionThe MITSUBISHI M6MGB/T160S4...

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T160S4BVP: Features: • Access time Flash Memory 90ns (Max.) SRAM 85ns (Max.)• Supply voltage Vcc=2.7 ~ 3.6V• Ambient temperature W version Ta=-20 ~ 85• Package : 48-pin TSOP (Type-I) , ...

T160S4BVP Data Sheet

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Part Number:
T160S4BVP
Supply Ability:
5000

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  • Qty
  • 1~5000
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  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Access time Flash Memory 90ns (Max.) SRAM 85ns (Max.)
• Supply voltage Vcc=2.7 ~ 3.6V
• Ambient temperature W version Ta=-20 ~ 85
• Package : 48-pin TSOP (Type-I) , 0.4mm lead pitch


Application

Mobile communication products


Pinout

Connection Diagram


Description

The MITSUBISHI M6MGB/T160S4BVP is a Stacked Multi Chip Package (S-MCP) that contents 16M-bits flash memory
and 4M-bits Static RAM in a 48-pin TSOP (TYPE-I).

16M-bits Flash memory is a 2097152 bytes /1048576 words, 3.3V-only, and high performance non-volatile memory
fabricated by CMOS technology M6MGB/T160S4BVP for the peripheral circuit and DINOR(DIvided bit-line NOR) architecture for the memory cell.

4M-bits SRAM is a 524288bytes / 262144words unsynchronous SRAM fabricated by silicon-gate CMOS technology.

M6MGB/T160S4BVP is suitable for the application of the mobile-communication-system to reduce both the mount space and weight .




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