MFG:Kemet Category:Capacitors
Category: Capacitors
MFG: Kemet
Descriptions: CAP TANTALUM 47UF 35V 20% RADIAL
500
9.72500
4862.50
| Technical/Catalog Information | T368D476M035AS |
| Vendor | Kemet |
| Category | Capacitors |
| Capacitance | 47F |
| Voltage - Rated | 35V |
| Tolerance | ±20% |
| Package / Case | Radial |
| Packaging | Bulk |
| Features | General Purpose |
| Maximum Temperature | -55°C ~ 85°C |
| Lead Spacing | 0.25" (6.35mm) |
| ESR (Equivalent Series Resistance) | - |
| Lifetime @ Temp. | - |
| Mounting Type | Through Hole |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | T368D476M035AS T368D476M035AS |
T363A105J035AS
PDF/DataSheet Download
The Taiwan Memory Technology Synchronous Burst RAM T35L6464Afamily employs high-speed, low power CMOS design using advanced triple-layer polysilicon,double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. ...
The Taiwan Memory Technology Synchronous Burst RAM T35L6432Bfamily employs high-speed, low power CMOS design using advanced triple-layer polysilicon,double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors.Th...
The Taiwan Memory Technology Synchronous Burst RAM T35L6432Afamily employs high-speed, low power CMOS design using advanced triple-layer polysilicon,double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. ...
The Taiwan Memory Technology Synchronous Burst RAM T35L3232Bfamily employs high-speed, low power CMOS design using advanced triple-layer polysilicon,double-layer metal technology. Each memory cell T35L3232B consists of four transistors and two high valued re...
CAPACITOR TANT 47UF 35V 10% RAD
CAPACITOR TANT 47UF 35V 10% RAD
Price: 10-20 USD
a-Si TFT-LCD Module, 24 inch-wide, 4.5 to 5.5V, 2.0 to 8.0mA, 2 channel LVDS interface compatible
Price: 1-2 USD
6N137-00ME, DIP, Integrated Circuits, AVAGO
Price: 3.8-6 USD
Programmable Logic Device, PLCC, -0.5 to +7.0V
Price: 12-25 USD
high-speed, lowpower logic integration, advanced CMOS technology, EPLD, PLCC, –2.0 to 7.0V
Price: 105-130 USD
ultra fast IGBT module, 1200V, 600A, homogeneous Si, Low inductance case, Short tail current
Price: 0.39-0.47 USD
Field Effect Transistor, TO-220, 60 V, 48 A, Super high dense cell
Price: 0.8-1.5 USD
sub-miniature relay switch, 5 A, 300 mW, 60 mA, 83.3 Ω, Low power
Price: 8-9 USD
RM30TB-H Mitsubishi Electric Semiconductor MITSUBISHI DIODE MODULES MEDIUM POWER GENERAL USE INSUL...
Price: 1.647-1.975 USD
5 V, power relay, High sensitivity, low power consumption, DIL pitch terminals, 1.2 x 50μs
Price: 0.7-0.9 USD
Internal Thermal Overload Protection, Bipolar Technology, TO220F, 1.5A, low dropout voltage regula...
Price: 0.2-0.69 USD
Switcher, 650 V, 880 (1650) mA
Price: 1-2 USD
QFP, 16-bit digital signal controller, 6-channel, PWM module, 4.0 V, 10 mA
