T431616A

• 3.3V power supply
• Clock cycle time : 6 / 7 / 8 / 10 ns
• Dual banks operation
• LVTTL compatible with multiplexed address
• All inputs are sampled at the positive going edge of system clock
• Burst Read Single-bit Write operation
• DQM for masking
• Auto refresh and self refresh
• 32ms refresh period (2K cycle)
• MRS cycle with address key programs
- CAS Latency ( 2 & 3 )
- Burst Length ( 1 , 2 , 4 , 8 & full page)
- Burst Type (Sequential & Interleave)
• Available package type in 50 pin TSOP(II) and 60-pin CSP.
• Operating temperature :
- -5 ~ +70 °C
- -40 ~ +85 °C

Note : Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to recommended operating condition. Exposure to higher than recommended voltage for extended periods of time could affect device reliability.

The T431616A is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits , fabricated with high performance CMOS technology . Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle . Range of operating frequencies , programmable burst length and programmable latencies allow the T431616A to be useful for a variety of high bandwidth , high performance memory system applications.