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MFG:NEC  

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Part Number: T55L

 

MFG: NEC

 

 

Description: The planar structure of the T55L silicon phototransistor provides a high degree of sensitivity. High reliabilit...


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T55L General Description


The planar structure of the T55L silicon phototransistor provides a high degree of sensitivity.

High reliability is ensured by a hermetically sealed TO-18 package.

T55L Maximum Ratings

Parameter
Symbol
Test Condition
Rating
Unit
Collector-emitter Voltage
VCEO
Ta=25
20
V
Emitter-collector Voltage
VECO
5
V
Collector Current
IC
20
mA
Power Dissipation
PC
150
mW
Power Dissipation Derating Factor *1
PC/°C
2.0
mW/
Operating Temperature
Topr
-
40 to +100
Storage Temperature
Tstg
-
55 to +125
*1 Allowable power dissipation derating factor at Ta³25°C

T55L Features

• Silicon planar technology applied in design allows detection of microscopic amounts of light
• Internal amplification provides high sensitivity
• TO-18 package for ease of handling

T55L Typical Application

• For photoelectric transducer, switching, logic circuits and miniaturization

T55L datasheet

T55L
PDF/DataSheet Download

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