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T830-xxxW

Features: · ITRMS = 8 A· VDRM = VRRM = 600V to 800V· EXCELLENT SWITCHING PERFORMANCES· INSULATING VOLTAGE = 1500V(RMS)· U.L. RECOGNIZED : E81734Specifications Symbol Parameter Value Unit IT(RMS) RMS on-state current(360° conduction angle) Tc =95 °C 8 A ITSM Non...

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SeekIC No. : 004511549 Detail

T830-xxxW: Features: · ITRMS = 8 A· VDRM = VRRM = 600V to 800V· EXCELLENT SWITCHING PERFORMANCES· INSULATING VOLTAGE = 1500V(RMS)· U.L. RECOGNIZED : E81734Specifications Symbol Parameter Value ...

T830-xxxW Data Sheet

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Part Number:
T830-xxxW
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· ITRMS = 8 A
· VDRM = VRRM = 600V to 800V
· EXCELLENT SWITCHING PERFORMANCES
· INSULATING VOLTAGE = 1500V(RMS)
· U.L. RECOGNIZED : E81734


Specifications

Symbol
Parameter
Value
Unit
IT(RMS)
 RMS on-state current
(360° conduction angle)
Tc =95 °C
8
A
ITSM
 Non repetitive surge peak on-state current
( Tj initial = 25°C )
tp = 16.7 ms
(1 cycle, 60 Hz)
88
A
tp = 10 ms
(1/2 cycle, 50 Hz)
100
I2t
 I2t value(half-cycle, 50 Hz)
tp = 10 ms
50
A2s
dI/dt
 Critical rate of rise of on-state current
Gate supply :IG = 50mA diG/dt = 0.1A/ms
Repetitive
F = 50 Hz
20
A/s
Non
Repetitive
100
Tstg
 Storage temperature range
- 40 to + 150
°C
Tj
 Operating junction temperature range
- 40 to + 125
TI
 Maximumlead temperature for soldering during 10s at 4.5 mm
from case
260
°C



Description

The T830-xxxW triacs use high performance glass passivated chip technology, housed in a fully molded plastic ISOWATT220AB package.

The SNUBBERLESSTM concept offers suppression of R-C network, and is suitable for applications such as phase control and static switch on inductive and resistive loads.


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