TAN150

SpecificationsMaximum Power Dissipation @ 252 583 WattsMaximum Voltage and CurrentBVces Collector to Base Voltage 55 VoltsBVebo Emitter to Base Voltage 3.5 VoltsIc Collector Current 15 AmpsMaximum TemperaturesStorage Temperature - 65 to + 150 Operating Junction Temperature + 200DescriptionThe TAN1...

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SeekIC No. : 004512398 Detail

TAN150: SpecificationsMaximum Power Dissipation @ 252 583 WattsMaximum Voltage and CurrentBVces Collector to Base Voltage 55 VoltsBVebo Emitter to Base Voltage 3.5 VoltsIc Collector Current 15 AmpsMaximum T...

floor Price/Ceiling Price

Part Number:
TAN150
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Description



Specifications

Maximum Power Dissipation @ 252          583 Watts
Maximum Voltage and Current
BVces Collector to Base Voltage                   55 Volts
BVebo Emitter to Base Voltage                     3.5 Volts
Ic Collector Current                                      15 Amps
Maximum Temperatures
Storage Temperature                                   - 65 to + 150
Operating Junction Temperature                  + 200



Description

The TAN150 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 960-1215 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF. The transistor includes input and output prematch for broadband capability. Low thermal resistance package reduces junction temperature, extends life.




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