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TAN 350

SpecificationsPower DissipationDevice Dissipation @25 (Pd) 1450 W (At rated pulse condition)Voltage and CurrentCollector to Base Voltage (BVces) 65VEmitter to Base Voltage (BVebo) 2.0 VCollector Current (Ic) 40 ATemperaturesStorage Temperature -65 to +200 Operating Junction Temperature +230 Descri...

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SeekIC No. : 004512397 Detail

TAN 350: SpecificationsPower DissipationDevice Dissipation @25 (Pd) 1450 W (At rated pulse condition)Voltage and CurrentCollector to Base Voltage (BVces) 65VEmitter to Base Voltage (BVebo) 2.0 VCollector Cur...

TAN 350 Data Sheet

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Part Number:
TAN 350
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Specifications

Power Dissipation
Device Dissipation @25 (Pd)                 1450 W (At rated pulse condition)
Voltage and Current
Collector to Base Voltage (BVces)            65V
Emitter to Base Voltage (BVebo)              2.0 V
Collector Current (Ic)                               40 A
Temperatures
Storage Temperature                              -65 to +200
Operating Junction Temperature             +230


Description

The TAN 350 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 960-1215 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF. The transistor includes input and output prematch for broadband capability. Low thermal resistance package reduces junction temperature, extends life.




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