TBB1004

Features:






Specifications






Description

      This is the description about TBB1004 of the Twin Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier.
      Here are the features: Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space.Suitable for World Standard Tuner RF amplifier.Very useful for total tuner cost reduction.Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. Provide mini mold packages; CMPAK-6.
      The absolute Maximum Ratings of TBB1004 are these (TA = 25°C). Drain to source voltage is 6 V. Gate1 to source voltage is from -0 to +6 V. Gate2 to source voltage VG2S from -0 to +6 V. Drain current is 30 mA. Channel power dissipation is 250 mW. Channel temperature Tch is 150 °C. Storage temperature Tstg  is from 55 to +150 °C.
      These are the Electrical Characteristicsof TBB1004  (Ta = 25°C). The below specification are applicable for UHF unit (FET1). Drain to source breakdown voltage is 6 V. Gate1 to source breakdown voltage is +6V. Gate2 to source breakdown voltage is +6 V. Gate1 to source cutoff current is +100 nA. Gate2 to source cutoff current is +100 nA. Gate1 to source cutoff voltage is from 0.5 to 1.0 V. Gate2 to source cutoff voltage is from 0.5 to 1.0 V. Drain current is from 13 to 21 mA. Forward transfer admittance is from| 21 to 31 mS. Input capacitance is from 1.4 to 2.2 pF. Output capacitanceis from 1.0 to 1.8 pF.Reverse transfer capacitance is  0.04 pF.
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