Features: · Gain bandwidth productfT = 1.1 GHz at VCE = 3 V, IC = 20 mAfT = 1.5 GHz at VCE = 5 V, IC = 30 mA· Power gain|S21|2 = 3.0 dB at VCE = 3 V, IC = 10 mA, f = 1 GHz· Noise figureNF = 1.8 dB at VCE = 3 V, IC = 10 mA, f = 1 GHzApplication· Broadband amplifier application under 1GHz· SAW filte...
TBN6501U: Features: · Gain bandwidth productfT = 1.1 GHz at VCE = 3 V, IC = 20 mAfT = 1.5 GHz at VCE = 5 V, IC = 30 mA· Power gain|S21|2 = 3.0 dB at VCE = 3 V, IC = 10 mA, f = 1 GHz· Noise figureNF = 1.8 dB a...
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| Characteristics | Symbol | Ratings | Unit |
| Collector to Base voltage | BVCBO | 20 | V |
| Collector to Emitter voltage | BVCEO | 8 | V |
| Emitter to Base voltage | BVEBO | 3 | V |
| Collector Current | IC | 100 | mA |
| Total Power Dissipation | Ptot | 200 | mW |
| Operating Junction Temperature | Tj | 150 | |
| Storage Temperature | Tstg | -65 ~ 150 |